2N914 DATASHEET PDF

2N from Fairchild Semiconductor. Find the PDF Datasheet, Specifications and Distributor Information. 2N Datasheet PDF Download – NPN Transistoor, 2N data sheet. 2N datasheet, 2N pdf, 2N data sheet, datasheet, data sheet, pdf, Central Semiconductor, Leaded Small Signal Transistor General Purpose.

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Over 5 megawatts of 30 ampere transistors are now serving in military and industrial applica- tions. For complete specifications of this spe- cial model-call your Tektronix Field Engineer.

RF in FM rec. Frank Malley, Dick son Electronics, P. The tests may be pro- grammed in any order through an easy-to- use punch card system. Offer many out- standing features: Heat-treatable PD is particularly suited for applica- datasueet requiring extensive cold working and upsetting. Collector saturation voltage is 0.

Write for a free copy today on your company letterhead: The semiconductor chip is bonded to a molybdenum sub- strate; junctions and surfaces are protected by a passivated surface of silicon oxide. South Minneapolis 8, Minn. Inter- national General Electric, Madison Ave.

Forward currents to 0. In response lo customer demand, Westinghouse now makes available its field-proven silicon power transistor in a new double-ended case. Washington 11D. Oxide-coated surface passivated units with working inverse voltages up to 1, volts.

Channeling is a condition whereby the surface portion of a transistor col- lector region actually changes polarity and becomes an extension of the base region. Dissipation is w; peak power capability is w. Condensed catalog, data sheets, application and design notes T1 How to Use the Charts A color code pairs the transistor type with the value of its key parameter. You can also test diodes under a wide variety of condi- tions and observe 2j914 characteristics on the 5-inch crt with a high degree of accuracy.

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The broad, inte- grated capabilities that made it possible are being applied constantly to the im- datasehet of Sylvania semiconductors. Cross Index Key Type No.

Small Signal Transistors

The epitaxial-base germanium units have a saturation voltage of 0. Test conditions are determined in a digital manner by prepunched cards.

Write Indus- trial Relations Director. Under datasheet ratings, manufacturers were asked to specify collector power dissipa- tion at 25 C case temperature, this general- ly being the most meaningful single dissipa- tion rating.

For complete information, including performance data, on this noteworthy new alloy, send for Brochure K. BIPCO devices containing up to silicon diodes and 10 silicon transistors are available as indi- vidual packages or as printed cir- cuit assemblies for counting, decoding and code-converting ap- plications. KF IOC 0.

2N914 Datasheet PDF – Motorola

Dissipation ratings to watts, currents to 20 amperes. AMP i 1. The major diameter is 0.

Electronics Park Syracuse 1, N. This performance stems from advanced device design and refined photolithographic techniques plus Sylvania’s exclusive skills in epitaxial technology. Conventional case for convenient mounting The 2NN series formerly Type offers the convenience of a low datashewt profile. AJ, ge npn, DM, si pnp. AJ, ge pnp,AJ,ge npn.

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If the postal return card has been removed from your copy of this publication, write on your company letterhead. Though initially devised for the pro- duction of high voltage silicon PNP transistors, there are strong indications that the Annular process yields major benefits for NPN and field effect tran- sistors and other semiconductor devices as well.

Leland Airborne Products Div. Jack Nancarrow, Dickson Dahasheet, P.

2N NTE Equivalent NTEA NPN audio transistor – Wholesale Electronics

In order of increasing forward-current transfer ratio. Each tested transistor is automat- ically placed in the appropriate sort bin. The result datawheet reliability without parallel. Collector-to-base voltage is 30 v, min; collector-to- emitter, 20 v, min; total dissipa- tion at 25 C free air, mw.

The Annular manufactur- ing process provides a new degree of freedom from surface effects for semiconductor products. The series is designed for use in high frequency amplifier circuits. Rated mW free air minimummW mounted in circuit boards, to 1 watt infinite heat sink.